Samsung Electronics today unveiled its latest high-end memory module, a 1GB fully buffered dual in-line memory module (FB Dimm) based on DDR2 technology, which it claims can resolve the limited memory performance of conventional registered Dimms.
The semiconductor firm claimed that the chip, which is based on a newly developed architecture, will "sharply boost memory density" and bandwidth to improve data processing in servers and workstations.
Currently, the memory slot access rate per channel decreases as the memory bus speed increases, resulting in limited density build-up as channel speeds increase.
The FB Dimm eliminates this 'stub-bus' channel bottleneck by using point-to-point links that enable multiple memory modules to be connected serially to a given channel, Samsung said.
A memory buffer chip is added to each module to enable the use of high and low speed interfaces. The buffer can generate speeds of 3.2Gbps to 4.8Gbps, six times that of the Dram.
"Emerging FB Dimm products, such as this first offering from Samsung, will deliver the high-performance memory required to balance the platform and enable the promise of tomorrow's high-speed server applications," said Jim Pappas, director of initiative marketing at Intel's Enterprise Platforms Group.
Samsung said that it will begin mass production of FB Dimms in the first half of 2005.
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