A new material for creating the transistors in processors could dramatically cut power consumption and boost performance.
The breakthrough was revealed at the IEEE International Electron Devices Meeting in Washington in a snappily titled paper called: 85nm Gate Length Enhancement and Depletion mode InSb Quantum Well Transistors for Ultra High Speed and Very Low Power Digital Logic Applications.
"The results of this research reinforce our confidence in being able to continue to follow Moore's Law beyond 2015," said Ken David, director of components research at Intel's Technology and Manufacturing Group.
"By providing 50 per cent more performance, while reducing power consumption by roughly 10 times, this new material will give us considerable flexibility because we will have ability to optimise the performance and power of future platforms."
Intel is expecting to introduce the technology into its mobile processors at first, but is also promoting greater energy efficiency at the PC and server level.
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