Toshiba and SanDisk today claimed an industry breakthrough after unveiling an 8GB Nand flash memory chip that offers 1GB data of storage capacity.
Fabricated with 70-nanometre process technology, the chip uses multi-level cell technology that allows two bits of data to be stored in one memory cell, thereby doubling memory capacity.
These improvements in circuit design result in an 8GB chip that is less than five per cent larger than the previous generation 4GB chip on 90 nanometre, according to the firms.
At 146mm square, the chip has an areal density of six billion bits, or three billion transistors per square centimetre, representing 20 billion transistors per square inch of silicon.
Performance is maximised by the adoption of fast writing circuit techniques, which the companies claim can reduce data write times and support a fast write speed of 6Mbps.
Toshiba and SanDisk plan to start production of the products based on the 8GB Nand flash memory technology this summer.
The companies also promised to commercialise a 16GB Nand flash memory integrated circuit that stacks two of the 8GB Nand flash memories in a single package.
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