The products have a chip area of 120 square millimetres, less than 30 per cent that of same density Nand Flash memories jointly developed by Toshiba and SanDisk and fabricated with 56nm process technology.
Toshiba explained that memory cells are grouped and controlled in Nand strings of 64 cells aligned in parallel, double the number of 56nm devices, with a dummy word-line at either end to prevent program disturbance.
This technology contributes to a reduction in the number of select gates and improves memory area efficiency, the company said.
Toshiba will start shipments of commercial samples of new 16Gb single-chip, multi-level cell Nand Flash memories from today, and start mass production from March.
Mass production of 32Gb Nand Flash memories is scheduled for early in the third quarter of this year.
Molybdenum ditelluride is a two-dimensional material that can be easily stacked into multiple layers to create a memory cell
New light-guiding nanoscale device can control and monitor a nanoparticle trapped in a laser beam with high sensitivity
Optical traps are scientific instruments in which a focused laser beam is used to exert an attractive or repulsive force on a microscopic object to hold it in place
Scientists estimate that the exoplanet has already lost up to 35 per cent of its mass over its lifetime
The observations were made using the Atacama Array in the Chilean desert