Samsung high-speed DDR2 NAND flash memory goes into production

Samsung has begun production of its high-performance DDR2 multi-level cell (MLC) NAND memory chips designed for use in smartphones, tablets and solid state drives (SSDs).

The chip features a 64Gbit density and is equipped with a toggle DDR2 interface, allowing it to transmit data at speeds of up to 400Mbit/s.

Samsung claimed that the chip is 10 times faster than the 40Mbit/s Single Data Rate NAND flash memory in widespread use today.

The MLC NAND chip is set to support the transition to USB 3.0 and SATA 6.0Gbit/s platforms, the manufacturer said.

"With this 20nm-class, 64Gbit, toggle DDR2 NAND, Samsung is leading the market, which is evolving to fourth-generation smartphones and SATA 6Gbit/s SSDs," said Wanhoon Hong, executive vice president of memory sales and marketing at Samsung.

"We will continue to aggressively develop the world's most advanced toggle DDR NAND flash solutions with higher performance and density, since we see them as vital to enabling a greater diversity of services for mobile phone users worldwide."

The NAND market is predicted to grow by 18 per cent to $22bn (£13.8bn) in 2011, driven by demand for tablets, smartphones and other consumer electronic devices, according to analysts at IHS iSuppli.

Oversupply could lead to a drop in profitability during 2012, but the industry should see a return to profitability growth in 2013, IHS iSuppli noted.