Intel samples first 50nm Flash memory

The move to 50nm will enable Intel and Micron to meet the growing demand for higher density Nand Flash

Intel and Micron Technology have begun sampling what they claim is the industry's first Nand Flash memory built on 50-nanometre (nm) process technology.

The samples were manufactured by IM Flash Technologies, a joint development and manufacturing venture formed by Micron and Intel in January.

Both companies are sampling 4Gb devices now, with plans to mass produce a range of densities on the 50nm node in 2007.

IM Flash Technologies said that the move to 50nm will enable Intel and Micron to meet the growing demand for higher density Nand Flash across a range of computing and consumer electronics applications. 

These include digital music players, removable storage and handheld communications devices.

According to industry research forecasts, the Nand market segment is estimated to reach between $13bn and $16bn in 2006, and grow to between $25bn and $30bn by 2010.

"Micron entered the Nand business in 2004 using a 90nm process," said Brian Shirley, vice president of memory at Micron.

"Micron will continue its commitment to Nand with a rapid transition to the 50nm process and continued work on advanced nodes for the introduction of even higher density products."