Intel and Micron tout latest Nand development

The new chip is able to store three bits of information per cell

Intel and Micron have developed a new flash memory chip which they hope will provider smaller, more efficient storage options.

The two chipmakers have developed a Nand memory chip which is able to store three bits of information per cell using a 34 nanometre fabrication process. In doing so, manufacturers are able to create a chip capable of storing 32 gigabits while maintaining a smaller die size.

The development of smaller fabrication methods such as the 34nm process has been a major goal for both memory and processor manufacturers in recent years. By shrinking the size and efficiency of the chips, manufacturers can produce higher density flash memory modules at a lower price point.

Randy Wilhelm, vice president and general manager of Intel's Nand solutions group, said: "The move to 3bpc is yet another proof point to the remarkable progress Intel and Micron have made in 34-nm Nand development.

"This milestone sets the stage for continued silicon leadership on 2xnm process that will help decrease costs and increase the capabilities of our Nand solutions for our customers."

The new chips are the latest to come out of the research partnership between Intel and Micron. The two firms have teamed up in the past for other breakthroughs, such as faster flash memory chips and larger solid state hard drives.