Spansion unveils four-bit-per-cell Flash memory

Spansion has demonstrated working silicon for a four-bit-per-cell Flash memory technology at its Fab 25 production facility in Austin, Texas.

The company claimed that its MirrorBit Quad technology is designed to expand Flash memory capabilities and lower the cost of storing large volumes of digital content inside electronic devices.

MirrorBit Quad will form the basis of a family of data storage offerings created for the integrated Flash memory and removable memory markets.

Production of MirrorBit Quad 512Mb, 1GB and 2GB products on 90nm is planned by year-end, followed by 1GB, 2GB, 4GB, 8GB and 16GB products on 65nm in 2007.

The technology stores charges in two distinct locations on a non-conducting nitride storage medium. While two-bit-per-cell MirrorBit technology stores one bit per storage location, MirrorBit Quad stores two bits per storage location.

Spansion claims that MirrorBit Quad has the headroom to support even more bits-per-cell in the future.

Owing to the increased storage capacity per cell, MirrorBit Quad is capable of delivering up to 30 per cent smaller effective cell size per bit than floating-gate MLC Nand Flash memory technology at the same process technology node.