Samsung claims highest-capacity SRam crown

Samsung Electronics claims to have developed the world's highest capacity static random access memory (SRam): a 72Mb Quad Data Rate (QDR) II SRam architecture.

Designed for next-generation high-performance networking systems, the memory simultaneously processes up to four different data streams and has double the capacity of Samsung's currently available 36Mb QDR II.

The electronics giant said that its latest SRam operates at 300MHz, or up to 20 per cent faster than the conventional QDR II, resulting in added performance for network applications.

The SRam, which is engineered as a fine ball grid array, improves utilisation of space on the system boards since the overall size is 30 per cent smaller than traditional chips in the thin quad flat package.

Full-scale production of the 72Mb QDR II SRam is set to start in the first half of 2005.