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/v3-uk/news/1942601/samsung-boosts-onenand-flash-2gb
27 Jun 2006, Robert Jaques , V3
Samsung Electronics claims to have doubled the capacity of its top-of-the-range OneNAND Flash memory chip to 2GB and boosted the component's 'write' speed from 9.3Mbps to 17Mbps.
The electronics giant said that the performance hike had been made possible by applying 60nm technology to the chip's production process.
Samsung claims that its OneNAND architecture combines the fast 'read' speed of NOR Flash memory with the high-capacity and fast 'write' speed of NAND Flash.
The chips are designed for a range of applications including multimedia phones, digital cameras, removable memory cards, PCs and digital TVs.
The devices can also be interleaved to attain a higher capacity while allowing each chip to interact independently with a core system. The more chips that are interconnected the more data that can be processed.
For example, the OneNAND chip's 'write' capacity can be increased to 136Mbps when eight of the 2GB memory chips are combined, the company said.
According to Samsung, the memory can be used as buffer memory not only for 'writes' in the system by using faster-than-NAND 'write' speeds, but as a buffer for high-performing 'read' operations.